메뉴 건너뛰기




Volumn , Issue , 2003, Pages 645-650

The development of defect free post-CMP cleaning in Cu/low-k damascene wiring

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; COPPER; HYDROPHILICITY; HYDROPHOBICITY; PERMITTIVITY; SURFACE PROPERTIES;

EID: 4043120567     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (3)

References (8)
  • 4
    • 33645357745 scopus 로고    scopus 로고
    • A 90nm copper CMP prcess with low defectivity using optimizing copper and barrier removal slurries
    • P. Gopalan, T. Buley, and M. Kulus, A 90nm Copper CMP Prcess with Low Defectivity Using Optimizing Copper and Barrier Removal Slurries, (2003), Proceedings of 2003 CMP-MIC Conference, pp257-267
    • (2003) Proceedings of 2003 CMP-MIC Conference , pp. 257-267
    • Gopalan, P.1    Buley, T.2    Kulus, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.