Hydrogen evolution from atomically flat Si(111) surfaces exposed to 40% NH 4F, oxygen-free water, or wet gas

Journal of the Electrochemical Society

Volumn 153, Issue 12, 2006, Pages

  Sawada, Yuuki ^a   Tsujino, Kazuya ^a   Matsumura, Michio ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b ELECTROCHEMICAL SOCIETY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN EVOLUTION; MONOHYDRIDES; OXIDATIVE DISSOLUTION; STEP DENSITIES;

AMMONIA; DISSOLUTION; HYDROGEN; SILICON WAFERS;

SURFACE TREATMENT;

EID: 33750797719     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2360767     Document Type: Article

References (15)

1. P. Jakob and Y. J. Chabal, J. Chem. Phys., 95, 2897 (1991).
2. G. S. Higashi, R. S. Becker, Y. J. Chabal, and A. J. Becker, Appl. Phys. Lett., 58, 1656 (1991).
3. P. Allongue, C. H. de Villeneuve, S. Morin, R. Boukherroub, and D. D. M. Wayner, Electrochim. Acta, 45, 4591 (2000).
4. C. P. Wade and C. E. D. Chidsey, Appl. Phys. Lett., 71, 1679 (1997).
5. S. Watanabe, N. Nakayama, and T. Ito, Appl. Phys. Lett., 59, 1458 (1991).
6. H. Fukidome and M. Matsumura, Jpn. J. Appl. Phys., Part 1, 38, L1085 (1999).
7. H. Fukidome and M. Matsumura, Surf. Sci., 463, L649 (2000).
8. P. Wagner, S. Nock, J. A. Spudich, W. D. Volkmuth, S. Chu, R. L. Cicero, C. P. Wade, M. R. Linford, and C. E. D. Chidsey, J. Struct. Biol., 119, 189 (1997).
9. S. Watanabe, J. Chem. Phys., 108, 5965 (1998).
10. S. P. Garcia, H. Bao, M. Manimaran, and M. A. Hines, J. Phys. Chem. B, 106, 8258 (2002).
11. J. G. Velasco, J. Electrochem. Soc., 150, C335 (2003).
12. M. A. Hines, Y. J. Chabal, T. D. Harris, and A. L. Harris, J. Chem. Phys., 101, 8055 (1994).
13. J. Flidr, Y. C. Huang, T. A. Newton, and M. A. Hines, J. Chem. Phys., 108, 5542 (1998).
14. J. H. Ye, T. H. Bok, J. S. Pan, S. F. Y. Li, and J. Y. Lin, J. Phys. Chem. B, 103, 5820 (1999).
15. H. Fukidome, M. Matsumura, T. Komeda, K. Namba, and Y. Nishioka, Electrochem. Solid-State Lett., 2, 393 (1999).