Characterization of Ohmic contacts on GaN/AlGaN heterostructures

Applied Surface Science

Volumn 253, Issue 3, 2006, Pages 1055-1064

  Kaciulis, S ^a   Pandolfi, L ^a   Viticoli, S ^a   Peroni, M ^b   Passaseo, A ^c  

^a CNR   (Italy)

^b Elettronica SpA   (Italy)

^c INFM   (Italy)

Author keywords

AES; AlGaN; Annealing; Ohmic contacts; XPS

Indexed keywords

ALUMINUM NITRIDE; ANNEALING; AUGER ELECTRON SPECTROSCOPY; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; HETEROJUNCTIONS; OHMIC CONTACTS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL STATES; FORMING GASES; GAN/ALGAN; METALLIC LAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33750687525     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.12.171     Document Type: Article

References (15)

1. Lin M.E., Ma Z., Huang F.Y., Fan Z.F., Allen L.H., and Morkoç H. Appl. Phys. Lett. 64 (1994) 1003
2. Guo J.D., Lin C.I., Feng M.S., Pan F.M., Chi G.C., and Lee C.T. Appl. Phys. Lett. 68 (1996) 235
3. Holloway P.H., Kim T.J., Trexler J.T., Miller S., Fijol J.J., Lampert W.V., and Haas T.W. Appl. Surf. Sci. 117-118 (1997) 362
4. Sporken R., Silien C., Malengreau F., Grigorov K., Caudano R., Sànchez F.J., Calleja E., Munoz E., Beaumont B., and Gibart P. MRS Internet J. Nitride Semicond. Res. 2 (1997) 23
5. Cordes H., and Chang Y.A. MRS Internet J. Nitride Semicond. Res. 2 (1997) 2
6. Pearton S.J., Zolper J.C., Shul R.J., and Ren F. J. Appl. Phys. 86 (1999) 1
7. Eastman L.F., Tilak V., Smart J., Green B.M., Chumbes E.M., Dimitrov R., Kim H., Ambacher O.S., Weimann N., Prunty T., Murphy M., Schaff W.J., and Shealy J.R. IEEE Trans. Electron Dev. 48 (2001) 479
8. Hilsenbeck J., Rieger W., Nebauer E., John W., Tränkle G., Würfl J., Ramakrishan A., and Obloh H. Phys. Status Solidi (a) 176 (1999) 183
9. Simin G., Hu X., Ilinskaya N., Zhang J., Tarakji A., Kumar A., Yang J., Asif Khan M., Gaska R., and Shur M.S. IEEE Electron Dev. Lett. 22 (2001) 53
10. Lee C., Lin Y.-J., and Lin C.-H. J. Appl. Phys. 92 (2002) 3325
11. Ruvimov S., Liliental-Weber Z., Washburn J., Duxstad K.J., Haller E.E., Fan Z.F., Mohammad S.N., Kim W., Botchkarev A.E., and Morkoç H. Appl. Phys. Lett. 69 (1996) 1556
12. Technical Note of the VG Scientific Ltd., UK, 1988.
13. Moulder J.F., Stickle W.F., Sobol P.E., and Bomben K.D. In: Chastain J., and King R.C.J. (Eds). Handbook of X-ray Photoelectron Spectroscopy (1995), Phys. Electronics Inc., Eden Prairie, USA
14. Erickson L.P., and Phillips B.F. J. Vac. Sci. Technol. B 1 (1983) 158
15. Wang Y.X., Cui Y.D., Chen Z.G., Lambers E., and Holloway P.H. J. Vac. Sci. Technol. A 8 (1990) 2241