Carbon nanotube field-effect transistors for high-performance digital circuits - Transient analysis, parasitics, and scalability

IEEE Transactions on Electron Devices

Volumn 53, Issue 11, 2006, Pages 2718-2726

  Keshavarzi, Ali ^a   Raychowdhury, Arijit ^b   Kurtin, Juanita ^a   Roy, Kaushik ^b   De, Vivek ^a  

^a INTEL CORPORATION   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

Carbon nanotube field effect transistors (CNFETs); High performance circuits; Packing density; Parasitic resistance and capacitance; Transient analysis

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; DIGITAL CIRCUITS; ELECTRIC CONTACTS; MOS DEVICES; MOSFET DEVICES; SCHOTTKY BARRIER DIODES;

CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; GATE OVERLAP CAPACITANCE; HIGH-PERFORMANCE DIGITAL CIRCUITS; PACKING DENSITY; PARASITIC RESISTANCE; TRANSIENT ANALYSIS;

FIELD EFFECT TRANSISTORS;

EID: 33750594849     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.883813     Document Type: Article

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