Defect reduction effects in GaAs on Si substrates by thermal annealing

Applied Physics Letters

Volumn 53, Issue 23, 1988, Pages 2293-2295

  Yamaguchi, Masafumi ^a   Yamamoto, Akio ^a   Tachikawa, Masami ^a   Itoh, Yoshio ^a   Sugo, Mitsuru ^a  

^a NTT CORPORATION   (Japan)

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EID: 36549094130     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.100257     Document Type: Article

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