A double junction model of irradiated silicon pixel sensors for LHC

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 568, Issue 1, 2006, Pages 51-55

  Chiochia, V ^a   Swartz, M ^b   Allkofer, Y ^a   Bortoletto, D ^c   Cremaldi, L ^d   Cucciarelli, S ^e   Dorokhov, A ^a,f   Hormann C ^a,f   Kim, D ^b   Konecki, M ^e   Kotlinski, D ^f   Prokofiev, K ^a,f   Regenfus, C ^a   Rohe, T ^f   Sanders, D A ^d   Son, S ^c   Speer, T ^a  

^a PHYSIK INSTITUT DER UNIVERSITÄT ZÜRICH   (Switzerland)

^b JOHNS HOPKINS UNIVERSITY   (United States)

^c PURDUE UNIVERSITY   (United States)

^d UNIVERSITY OF MISSISSIPPI   (United States)

^e UNIVERSITY OF BASEL   (Switzerland)

^f PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

Charge collection; CMS; Electric field; Pixel; Radiation hardness; Silicon

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC FIELDS; PROTON IRRADIATION; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

BIAS VOLTAGES; CHARGE COLLECTION; RADIATION HARDNESS; TRAP CONCENTRATIONS;

SILICON SENSORS;

EID: 33750367986     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.05.199     Document Type: Article

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