Extraction of electric field in heavily irradiated silicon pixel sensors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 560, Issue 1, 2006, Pages 112-117

  Dorokhov, A ^a,b   Allkofer, Y ^a   Amsler, C ^a   Bortoletto, D ^c   Chiochia, V ^a   Cremaldi, L ^d   Cucciarelli, S ^e   Hormann C ^a,b   Kim, D ^f   Konecki, M ^e   Kotlinski, D ^b   Prokofiev, K ^a,b   Regenfus, C ^a   Rohe, T ^b   Sanders, D ^d   Son, S ^c   Speer, T ^a   Swartz, M ^f  

^a PHYSIK INSTITUT DER UNIVERSITÄT ZÜRICH   (Switzerland)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

^c PURDUE UNIVERSITY   (United States)

^d MISSISSIPPI STATE UNIVERSITY   (United States)

^e UNIVERSITY OF BASEL   (Switzerland)

^f JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

Charge collection; CMS; Electric field; Lorentz angle; Pixel; Radiation hardness; Silicon

Indexed keywords

DEFLECTION (STRUCTURES); ELECTRIC CHARGE; ELECTRIC FIELDS; ELECTRON MOBILITY; IRRADIATION;

CHARGE COLLECTION; CMS; LORENTZ ANGLE; PIXEL; RADIATION HARDNESS;

SILICON SENSORS;

EID: 33646471513     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.11.247     Document Type: Article

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