Tests of silicon sensors for the CMS pixel detector

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 530, Issue 1-2, 2004, Pages 71-76

  Dorokhov, A ^a,b   Amsler, C ^a   Bortoletto, D ^c   Chiochia, V ^a   Cremaldi, L ^d   Cucciarelli, S ^e   Konecki, M ^e   Prokofiev, K ^a,b   Regenfus, C ^a   Rohe, T ^b   Sanders, D ^d   Son, S ^c   Speer, T ^a   Swartz, M ^f  

^a UNIVERSITY OF ZURICH   (Switzerland)

^b PAUL SCHERRER INSTITUTE   (Switzerland)

^c PURDUE UNIVERSITY   (United States)

^d MISSISSIPPI STATE UNIVERSITY   (United States)

^e UNIVERSITY OF BASEL   (Switzerland)

^f JOHNS HOPKINS UNIVERSITY   (United States)

Author keywords

Charge collection; CMS; LHC; Lorentz angle; Pixel; Radiation hardness

Indexed keywords

ELECTRIC POTENTIAL; HIGH ENERGY PHYSICS; IRRADIATION; MAGNETIC FIELDS; PARTICLE BEAM TRACKING; RADIATION HARDENING; SIGNAL TO NOISE RATIO; SILICON SENSORS;

CHARGE COLLECTION; CMS; LHC; LORENTZ ANGLE; PIXELS; RADIATION HARDNESS;

PARTICLE DETECTORS;

EID: 4243185708     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2004.05.050     Document Type: Conference Paper

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