Simulation of heavily irradiated silicon pixel sensors and comparison with test beam measurements

IEEE Transactions on Nuclear Science

Volumn 52, Issue 4, 2005, Pages 1067-1075

  Chiochia, Vincenzo ^a,g   Swartz, Morris ^b,g   Bortoletto, Daniela ^c,g   Cremaldi, Lucien ^d,g   Cucciarelli, Susanna ^e,g   Dorokhov, Andrei ^a,f,g   Hörmann, Christoph ^a,f,g   Kim, Dongwook ^b,g   Konecki, Marcin ^e,g   Kotlinski, Danek ^f,g   Prokofiev, Kirill ^a,f,g   Regenfus, Christian ^a,g   Rohe, Tilman ^f,g   Sanders, David A ^d,g   Son, Seunghee ^c   Speer, Thomas ^a  

^a PHYSIK INSTITUT DER UNIVERSITÄT ZÜRICH   (Switzerland)

^b JOHNS HOPKINS UNIVERSITY   (United States)

^c PURDUE UNIVERSITY   (United States)

^d UNIVERSITY OF MISSISSIPPI   (United States)

^e UNIVERSITY OF BASEL   (Switzerland)

^f PAUL SCHERRER INSTITUTE   (Switzerland)

^g IEEE   (Switzerland)

Author keywords

Electric fields; Pixels; Radiation effects; Simulation; Space charge

Indexed keywords

CHARGE INDUCTION EFFECTS; DOPING DENSITY; PIXELS; SILCION PIXEL SENSORS;

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; MATHEMATICAL MODELS; RADIATION DETECTORS; SEMICONDUCTOR JUNCTIONS;

RADIATION EFFECTS;

EID: 27644563971     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.852748     Document Type: Article

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