Effects of different defect types on the performance of devices fabricated on a 4H-SiC homoepitaxial layer

Materials Research Society Symposium Proceedings

Volumn 911, Issue , 2006, Pages 169-174

  Chen, Hui ^a   Raghothamachar, Balaji ^a   Vetter, William ^a   Dudley, Michael ^a   Wang, Y ^b   Skromme, B J ^b  

^a Stony Brook University   (United States)

^b Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; GRAIN BOUNDARIES; SILICON CARBIDE;

SCHOTTKY CONTACTS; SYNCHROTRON WHITE BEAM X-RAY TOPOGRAPHY (SWBXT); THREADING EDGE DISLOCATIONS; TRIANGULAR DEFECTS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33750322201     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0911-b12-03     Document Type: Conference Paper

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