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Volumn 18, Issue 20, 2006, Pages 4722-4723

Maskless microetching of transparent conductive oxides (ITO and ZnO) and semiconductors (GaAs) based on reaction-diffusion

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE MATERIALS; DIFFUSION; ETCHING; HYDROGELS; OPTOELECTRONIC DEVICES; ZINC OXIDE;

EID: 33750282706     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm061468p     Document Type: Article
Times cited : (22)

References (20)
  • 7
    • 0001517650 scopus 로고    scopus 로고
    • note
    • 2 (∼8 × 8 μm) with FIB at 15 nm resolution (see ref 3).
  • 13
    • 33750320862 scopus 로고    scopus 로고
    • note
    • 2, is solved subject to the conditions that (i) the concentration of the etchant far from the interface is constant and (ii) the reaction (etching) rate at the interface is proportional to the flux of etchant therein. In the reaction-controlled regime, the solution to this problem gives a constant etch rate.
  • 16
    • 33750349016 scopus 로고    scopus 로고
    • note
    • In addition, the oil minimized etchant evaporation and stamp drying, thus allowing for longer etching times.
  • 17


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.