-
1
-
-
0016118160
-
High-Speed Integrated Logic with GaAs MESFET's
-
R. L. Van Tuyl and C. A. Liechti, "High-Speed Integrated Logic with GaAs MESFET's," IEEE J. Solid-State Circuits, Vol. SC-9, No. 5, pp. 269-276, 1974.
-
(1974)
IEEE J. Solid-State Circuits
, vol.SC-9
, Issue.5
, pp. 269-276
-
-
Van Tuyl, R.L.1
Liechti, C.A.2
-
2
-
-
0020474506
-
+-Layer Technology (SAINT) for High-Speed GaAs ICs
-
+-Layer Technology (SAINT) for High-Speed GaAs ICs," Electron Lett., Vol. 18, No. 3, pp. 119-121, 1982.
-
(1982)
Electron Lett.
, vol.18
, Issue.3
, pp. 119-121
-
-
Yamasaki, K.1
Asai, K.2
Mizutani, T.3
Kurumada, K.4
-
3
-
-
0027871262
-
Research Trends and Future Prospects in MMIC Technology
-
in Japanese
-
M. Aikawa and M. Muraguchi, "Research Trends and Future Prospects in MMIC Technology," NTT R&D Vol. 42, No. 1 pp. 1-8, 1993 (in Japanese).
-
(1993)
NTT R&D
, vol.42
, Issue.1
, pp. 1-8
-
-
Aikawa, M.1
Muraguchi, M.2
-
4
-
-
0026928118
-
50-nm Self-Aligned-Gate Pseudomorphic AlInAs/GaInAs High Electron Mobility Transistors
-
L. D. Nguyen, A. B. Brown, M. A. Thompson and L. M. Jelloian, "50-nm Self-Aligned-Gate Pseudomorphic AlInAs/GaInAs High Electron Mobility Transistors," IEEE Trans. Electron Devices, Vol. ED-39, No. 9, pp. 2007-2014, 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.ED-39
, Issue.9
, pp. 2007-2014
-
-
Nguyen, L.D.1
Brown, A.B.2
Thompson, M.A.3
Jelloian, L.M.4
-
5
-
-
0006688861
-
Ballistic Collection Transistors and Their Applications
-
T. Ishibashi, Y. Yamaguchi, E. Sano, H. Nakajima and Y. Matsuoka, "Ballistic Collection Transistors and Their Applications," Int. J. High Speed Electronics and Systems, Vol. 5 No. 3, pp. 349-379, 1994.
-
(1994)
Int. J. High Speed Electronics and Systems
, vol.5
, Issue.3
, pp. 349-379
-
-
Ishibashi, T.1
Yamaguchi, Y.2
Sano, E.3
Nakajima, H.4
Matsuoka, Y.5
-
10
-
-
0029370763
-
Device Figure-of-Merits for High Speed Digital ICs and Baseband Amplifiers
-
E. Sano, Y. Matsuoka and T. Ishibashi, "Device Figure-of-Merits for High Speed Digital ICs and Baseband Amplifiers," IEICE Trans. Electron., Vol. E78-C, No. 9, pp. 1182-1188, 1995.
-
(1995)
IEICE Trans. Electron.
, vol.E78-C
, Issue.9
, pp. 1182-1188
-
-
Sano, E.1
Matsuoka, Y.2
Ishibashi, T.3
-
11
-
-
5244375000
-
Electromagnetic Field Analysis for Microwave Integrated Circuits
-
in Japanese
-
T. Shibata, E. Sano, and A. Iwata, "Electromagnetic Field Analysis for Microwave Integrated Circuits," NTT R&D, Vol. 39, No. 5, pp. 811-820, 1990 (in Japanese).
-
(1990)
NTT R&D
, vol.39
, Issue.5
, pp. 811-820
-
-
Shibata, T.1
Sano, E.2
Iwata, A.3
-
12
-
-
0028739781
-
An Automated Electro-Optic Probing System for Ultra-High-Speed IC's
-
M. Shinagawa and T. Nagatsuma, "An Automated Electro-Optic Probing System for Ultra-High-Speed IC's," IEEE Trans. Instrum. Meas., Vol. 43, No. 6, pp. 843-847, 1994.
-
(1994)
IEEE Trans. Instrum. Meas.
, vol.43
, Issue.6
, pp. 843-847
-
-
Shinagawa, M.1
Nagatsuma, T.2
-
13
-
-
0026995953
-
39.5-GHz Static Frequency Divider Implemented in AlInAs/GaInAs HBT Technology
-
M. Hafizi, J. F. Jensen, R. A. Metzger, W. E. Stanchina, D. B. Rensch and Y. K. Allen, "39.5-GHz Static Frequency Divider Implemented in AlInAs/GaInAs HBT Technology," IEEE Rtectron Device Lett., Vol. 13, No. 12, pp. 612-614, 1992.
-
(1992)
IEEE Rtectron Device Lett.
, vol.13
, Issue.12
, pp. 612-614
-
-
Hafizi, M.1
Jensen, J.F.2
Metzger, R.A.3
Stanchina, W.E.4
Rensch, D.B.5
Allen, Y.K.6
-
14
-
-
0029519984
-
Ultra-High-Speed InAlAs/InGaAs HEMT ICs Using pn-Level-Shift Diodes
-
T. Enoki, Y. Umeda, K. Osafune, H. Ito and Y. Ishii, "Ultra-High-Speed InAlAs/InGaAs HEMT ICs Using pn-Level-Shift Diodes," IEEE Int. Electron Devices Meeting Tech. Dig., pp. 193-196, 1995.
-
(1995)
IEEE Int. Electron Devices Meeting Tech. Dig.
, pp. 193-196
-
-
Enoki, T.1
Umeda, Y.2
Osafune, K.3
Ito, H.4
Ishii, Y.5
-
15
-
-
0028017089
-
A 0.1 μm GaAs MESFET Technology for Ultra-High-Speed Digital and Analog ICs
-
M. Tokumitsu, M. Hirano, K. Murata, Y. Imai and K. Yamasaki, "A 0.1 μm GaAs MESFET Technology for Ultra-High-Speed Digital and Analog ICs," IEEE MTT-S Int. Microwave Symp. Dig., pp. 1629-1632, 1994.
-
(1994)
IEEE MTT-S Int. Microwave Symp. Dig.
, pp. 1629-1632
-
-
Tokumitsu, M.1
Hirano, M.2
Murata, K.3
Imai, Y.4
Yamasaki, K.5
-
16
-
-
0005775288
-
DC-to-40-GHz GaAs MESFET Distributed Baseband Amplifier IC
-
S. Kimura and Y. Imai, "DC-to-40-GHz GaAs MESFET Distributed Baseband Amplifier IC," Asia Pacific Microwave Conf. Proc., pp. 249-252, 1994.
-
(1994)
Asia Pacific Microwave Conf. Proc.
, pp. 249-252
-
-
Kimura, S.1
Imai, Y.2
-
17
-
-
0029354745
-
0-90 GHz InAlAs/InGaAs/InP HEMT Distributed Base-band Amplifier IC
-
S. Kimura, Y. Imai, Y. Umeda and T. Enoki, "0-90 GHz InAlAs/InGaAs/InP HEMT Distributed Base-band Amplifier IC," Electron. Lett., Vol. 31, No. 17, pp. 1430-1431, 1995.
-
(1995)
Electron. Lett.
, vol.31
, Issue.17
, pp. 1430-1431
-
-
Kimura, S.1
Imai, Y.2
Umeda, Y.3
Enoki, T.4
-
18
-
-
0029237828
-
Ultra-High-Speed Integrated Circuit Technology
-
in Japanese
-
E. Sano, Y. Imai, M. Togashi and T. Ono, "Ultra-High-Speed Integrated Circuit Technology," NTT R&D Vol. 44, No. 3, pp. 259-264, 1995 (in Japanese).
-
(1995)
NTT R&D
, vol.44
, Issue.3
, pp. 259-264
-
-
Sano, E.1
Imai, Y.2
Togashi, M.3
Ono, T.4
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