Influence of polarization charges and electron trapping in the buffer layer in wurtzite phase AlGaN/GaN HFETs

Modern Physics Letters B

Volumn 20, Issue 22, 2006, Pages 1397-1404

  Arabshahi, H ^a   Ghasemian, M H ^b  

^a HAKIM SABZEVARI UNIVERSITY   (Iran)

^b Department of Electronics   (Iran)

Author keywords

Ensemble Monte Carlo; HFET transistor; Piezoelectric effect; Polarization changes; Wurtzite structure

Indexed keywords

EID: 33750260009     PISSN: 02179849     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217984906011608     Document Type: Article

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