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Volumn 17, Issue 8, 2006, Pages 905-908

Process investigation of electron beam evaporation deposited amorphous silicon optical films

Author keywords

Amorphous silicon; Extinction coefficient; Refractive index; Semiconductor laser; Spectroscopic ellipsometer

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; ELECTRON BEAMS; EVAPORATION; MIRRORS; REFRACTIVE INDEX; SEMICONDUCTOR LASERS; SUBSTRATES;

EID: 33750218385     PISSN: 10050086     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (4)

References (7)
  • 2
    • 3142645744 scopus 로고    scopus 로고
    • Facet coatings for nonhermetically packaged lasers
    • Caballero J A, He C, Djavani Tabrizi S, et al. Facet coatings for nonhermetically packaged lasers[J]. J Vac Sci Technol A, 2004, 22(3): 865-869.
    • (2004) J Vac Sci Technol A , vol.22 , Issue.3 , pp. 865-869
    • Caballero, J.A.1    He, C.2    Djavani, T.S.3
  • 3
    • 0028766445 scopus 로고
    • Facet degradation of aged strained quantum-well lasers studied by high-voltage electron-beam-induced current
    • Wang M, Hwang D M, Lin P S D, et al. Facet degradation of aged strained quantum-well lasers studied by high-voltage electron-beam-induced current[J]. Appl Phys Lett, 1994, 64(23): 3145-3147.
    • (1994) Appl Phys Lett , vol.64 , Issue.23 , pp. 3145-3147
    • Wang, M.1    Hwang, D.M.2    Lin, P.S.D.3
  • 4
    • 1442288559 scopus 로고    scopus 로고
    • High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm
    • YI Qu. SHU Yuan, CHONG Yang-lin, et al. High-power InAlGaAs/GaAs and AlGaAs/GaAs semiconductor laser arrays emitting at 808 nm[J]. IEEE Photonics Technology Letters, 2004, 16(2): 389-391.
    • (2004) IEEE Photonics Technology Letters , vol.16 , Issue.2 , pp. 389-391
    • Yi, Q.1    Shu, Y.2    Chong, Y.-L.3
  • 5
    • 22944467543 scopus 로고    scopus 로고
    • Influence of substrate temperature on the deposition of uc-Si: H thin film fabricated with VHF-PECVD and its structural properties
    • in Chinese
    • YANG Hui-dong. Influence of substrate temperature on the deposition of uc-Si: H thin film fabricated with VHF-PECVD and its structural properties[J]. Journal of Optoelectronics·Laser, 2005, 16(6): 646-649. (in Chinese)
    • (2005) Journal of Optoelectronics·Laser , vol.16 , Issue.6 , pp. 646-649
    • Yang, H.-D.1
  • 6
    • 3242658029 scopus 로고    scopus 로고
    • Study on the properties of silicon-based films with high growth rate fabricated by VHF-PECVD at low temperature
    • in Chinese
    • ZHANG Xiao-dan, ZHAO Ying, ZHU Feng, et al. Study on the properties of silicon-based films with high growth rate fabricated by VHF-PECVD at low temperature[J]. Journal of Optoelectronics·Laser, 2004, 15(5): 507-511. (in Chinese)
    • (2004) Journal of Optoelectronics·Laser , vol.15 , Issue.5 , pp. 507-511
    • Zhang, X.-D.1    Zhao, Y.2    Zhu, F.3
  • 7
    • 0038306948 scopus 로고    scopus 로고
    • Increasing medium-range order in amorphous silicon with low-energy ion bombardment
    • Gerbi J E, Voyles P M, Treacy M M J, et al. Increasing medium-range order in amorphous silicon with low-energy ion bombardment[J]. Appl Phys Lett, 2003, 82(21): 3665-3667.
    • (2003) Appl Phys Lett , vol.82 , Issue.21 , pp. 3665-3667
    • Gerbi, J.E.1    Voyles, P.M.2    Treacy, M.M.J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.