Influence of Cu electroplating solution on self-assembled porous silica low-k films

Journal of the Electrochemical Society

Volumn 153, Issue 9, 2006, Pages

  Shimoyama, Masashi ^a   Yagi, Ryotaro ^a   Chikaki, Shinichi ^a   Fujii, Nobutoshi ^a   Nakayama, Takahiru ^a   Kohmura, Kazuo ^a   Tanaka, Hirofumi ^a   Kinoshita, Keizo ^a   Kikkawa, Takamaro ^b,c,d  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

COPPER PLATING; LEAKAGE CURRENTS; MOLECULAR WEIGHT; POLYETHYLENE GLYCOLS; POROUS SILICON; SEMICONDUCTING FILMS;

PERMEATION CHARACTERISTICS; SILICA FILMS; WETTABILITY;

ELECTROPLATING SOLUTIONS;

EID: 33750135536     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2218263     Document Type: Article

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