Temperature-dependent switching current of Cr-doped SrZrO 3/SrRuO3 deposited for ReRAM applications by using PLD

Journal of the Korean Physical Society

Volumn 49, Issue 3, 2006, Pages 1071-1075

  Jung, Kyooho ^a   Seo, Hongwoo ^a   Kim, Nambin ^a   Kim, Yongmin ^a   Im, Hyunsik ^a   Park, Jae Wan ^b   Yang, Min Kyu ^b   Lee, Jeon Kook ^b  

^a Dongguk University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Non volatile memory; Perovskite material; Resistive switching

Indexed keywords

EID: 33749836016     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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