Uniform sub-nm nitridation on Si(100) through strong N condensation

AIP Conference Proceedings

Volumn 772, Issue , 2005, Pages 395-396

  Kato, K ^a   Nakasaki, Y ^a   Matsushita, D ^a   Muraoka, K ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749473552     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.1994152     Document Type: Conference Paper

References (5)

1. Matsushita, D., Muraoka, K., Nakasaki, Y., Kato, K., Inumiya, S., Eguchi, K., and Takayanagi, M., Symp. VLSI Tech., p 172-173(2004).
2. Kato, K., Nakasaki, Y., and Uda, T., Phys. Rev. B 66, 075308(2002).
3. Yamasaki, T., Kato, K., and Uda, T., Phys. Rev. Letters 91, 146102(2003).
4. Kim, J. W., Yeom, H. W., Kong, K. J., Yu, B. D., Ahn, D. Y., Chung, Y. D., Whang, C. N., Yi, H., Ha, Y. H., and Moon, D. W., Phys. Rev. Letters 90, 106101(2003).
5. Matsushita, D., Ikeda, H., Sakai, A., Zaima, S., andYasuda, Y, Jpn. J. Appl. Phys. 40, 2827-2829(2001).