Numerical simulation of long wavelength photovoltaic HgCdTe photodiodes

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

Volumn 25, Issue 4, 2006, Pages 251-256

  Xu, Xiang Yan ^a   Lu, Wei ^a   Chen, Xiao Shuang ^a   Xu, Wen Lan ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

HgCdTe; Long wavelength IR photodiodes; Minority carrier lifetime; Quantum efficiency; R0A product

Indexed keywords

BACKSIDE ILLUMINATED CONFIGURATION; ELECTRON LIFETIME; LONG WAVELENGTH IR PHOTODIODES; MINORITY CARRIER LIFETIME; N ON P LONG WAVELENGTH PHOTOVOLTAIC HGCDTE PHOTODIODES; N SIDE DOPING PROFILE; NUMERICAL SIMULATION; P TYPE REGION THICKNESS; R0A PRODUCT; ZERO BIAS PHOTOCURRENT;

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; INFRARED DETECTORS; MATHEMATICAL TECHNIQUES; ONE DIMENSIONAL; PHOTOCURRENTS; PHOTOVOLTAIC EFFECTS; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING; TWO DIMENSIONAL;

PHOTODIODES;

EID: 33749464297     PISSN: 10019014     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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