Electrical activation of boron implanted in p-HgCdTe (x = 0.22) by low-temperature annealing under an anodic oxide

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 266-269

  Talipov, N Kh ^a   Ovsyuk, V N ^a   Remesnik, V G ^a   Vasilyev, V V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

Differential Hall effect; Electrical activation of boron; Optical reflection; Secondary ion mass spectroscopy

Indexed keywords

ANNEALING; BORON; HALL EFFECT; ION IMPLANTATION; LIGHT REFLECTION; LOW TEMPERATURE EFFECTS; OXIDES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

DIFFERENTIAL HALL EFFECT; ELECTRICAL ACTIVATION;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0031070419     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01775-8     Document Type: Article

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