Injection level dependence of the gain, refractive index variation, and alpha (α) parameter in broad-area InGaAs deep quantum-well lasers

Optik

Volumn 117, Issue 11, 2006, Pages 511-515

  Celebi, Fatih V ^a   Dalkiran, Ilker ^b   Danisman, Kenan ^b  

^a BASKENT UNIVERSITY   (Turkey)

^b ERCIYES UNIVERSITY   (Turkey)

Author keywords

CAD modeling; Laser diode; Neural network; Optical design; Quantum well

Indexed keywords

COMPUTER AIDED DESIGN; MATHEMATICAL MODELS; NEURAL NETWORKS; OPTICAL DESIGN; REFRACTIVE INDEX; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

CAD MODELING; INJECTION LEVEL DEPENDENCE; REFRACTIVE INDEX VARIATION;

QUANTUM WELL LASERS;

EID: 33749427026     PISSN: 00304026     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ijleo.2005.11.011     Document Type: Article

References (24)

1. Shiao H.P., Lee H.Y., Lin Y.J., Tu Y.K., and Lee C.T. Growth and performance study of aluminum free InGaAs/GaAs/InGaAsP strained quantum-well pump lasers. Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes 40 (2001) 6384-6390
2. Krukpe W.F. New laser materials for diode pumped solid state lasers. Curr. Opinion Solid State Mater. Sci. 4 (1999) 197-201
3. Jakubowitz A. Characterization of semiconductor laser diodes by beam injection techniques. Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. 42 (1996) 1-7
4. Syrbu A.V., Mereutza A.Z., and Suruceanu G.I. Fabrication, characterization, and applications of high-performance AlGaAs-based buried-heterostructure diode lasers. Optical Engineering 35 5 (1996) 1278-1283
5. Saijo H., Ning G., and Yabuuchi Y. Analytical color fluorescence electron-microscopy observation of laser diodes. J. Electron Microsc. 43 (1994) 77-83
6. Kim J., Johnson W.B., and Kanakaraju S. Improvement of dark current using InP/InGaAsP transition layer in large-area InGaAs MSM photodetectors. IEEE Trans. Electron Devices 51 (2004) 351-356
7. Stohs J., Bossert D.J., Gallant D.J., and Brueck S.R.J. Gain, refractive index change, and linewidth enhancement factor in broad-area GaAs and InGaAs quantum-well lasers. IEEE J. Quantum Electron. 37 (2001) 1449-1459
8. Miles R.O., Dupertuis M.A., Reinhart F.K., and Brosson P.M. Gain measurements in InGaAs/InGaAsP multi- quantum-well broad area lasers. IEE Proc. J. Optoelectron. 139 (1992) 33-38
9. Guo W.H., Lu Q.L., Huang Y.Z., and Yu L.J. Fourier series expansion method for gain measurement from amplified spontaneous emission spectra of Fabry-Perot semiconductor lasers. IEEE J. Quantum Electron. 40 (2004) 123-129
10. Wenzel H., Erbert G., and Enders P.M. Improved theory of the refractive-index change in quantum-well lasers. IEEE J. Sel. Topics Quantum Electron. 5 (1999) 637-642
11. Henry C.H. Theory of the linewidth of semiconductor lasers. IEEE J. Quantum Electron. 18 (1982) 259-264
12. Sagiroglu S., Celebi F.V., and Danisman K. Modeling of the linewidth enhancement factor with the use of radial basis function network. Int. J. Electron. Commun. (AEÜ) 56 (2002) 51-54
13. Celebi F.V. A different approach to gain computation in laser diodes with respect to different number of quantum-wells. Optik 116 (2005) 375-378
14. Ham F.M., and Kostanic I. Principles of Neurocomputing for Science and Engineering (2002), Mc-Graw Hill, Singapore
15. Mackay D.J.C. Bayesian interpolation. Neural Computation 4 (1992) 415-447
16. Foresee F.D., and Hagan M.T. Gauss-Newton approximation to Bayesian regularization. Proceedings of International Conference on Neural Networks (ICNN 97) (1997), Houston, Texas 1930-1935
17. Hagan M.T., and Menhaj M. Training feedforward networks with the Marquardt algorithm. IEEE Neural Networks 5 (1994) 989-993
18. Hakki B.W., and Paoli T.L. CW degradation at 300 K of GaAs double heterostructure lasers. II. Electronic gain. J. Appl. Phys. 44 (1973) 4113-4119
19. Bossert D.J., and Gallant D. Gain, refractive index, and α parameter InGaAs-GaAs SQW broad-area lasers. IEEE Photonics Technol. Lett. 8 (1996) 322-324
20. Makino T. Analytical formulas for the optical gain of quantum wells. IEEE J. Quantum Electron. 32 (1996) 493-501
21. Kochman B., Stiff-Roberts A.D., Chakrabarti S., Phillips J.D., Krishna S., Singh J., and Bhattacharya P. Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors. IEEE J. Quantum Electron. 39 (2003) 459-467
22. Bishop C.M. Neural Networks for Pattern Recognition (1996), Oxford University Press, Oxford
23. Powell M.J.D. Restart procedures for the conjugate gradient method. Math. Program. 12 (1977) 241-254
24. Scales L.E. Introduction to Non-Linear Optimization (1985), Springer, New York