Improvement of Dark Current Using InP/InGaAsP Transition Layer in Large-Area InGaAs MSM Photodetectors

IEEE Transactions on Electron Devices

Volumn 51, Issue 3, 2004, Pages 351-356

  Kim, Junghwan ^a   Johnson, William B ^b   Kanakaraju, S ^a   Calhoun, L C ^a   Lee, Chi H ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b LABORATORY FOR PHYSICAL SCIENCES   (United States)

Author keywords

Epitaxial layers; Metal semiconductor metal (MSM) devices; Photodetectors; Schottky barriers

Indexed keywords

ACTIVATION ENERGY; BANDWIDTH; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL DESIGN; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM PHOSPHIDE;

EPITAXIAL LAYERS; METAL-SEMICONDUCTOR-METAL (MSM) DEVICES;

PHOTODETECTORS;

EID: 1642368167     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.822276     Document Type: Article

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