Growth and performance study of aluminum-free InGaAs/GaAs/InGaAsP strained quantum-well pump lasers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 11, 2002, Pages 6384-6390

  Shiao, Hung Pin ^a   Lee, Hsin Ying ^a   Lin, Yow Jon ^a   Tu, Yuan Kuang ^a   Lee, Ching Ting ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Aluminum free pump lasers; OMVPE epitaxial growth; Photoluminescence; Strained quantum well lasers; Transmission electron microscopy

Indexed keywords

ALUMINUM; AMPLIFIERS (ELECTRONIC); CRYSTAL LATTICES; ELECTRIC PROPERTIES; LIGHT EMISSION; PHOTOLUMINESCENCE; PRESSURE EFFECTS; PUMPING (LASER); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM FREE PUMP LASERS; EMISSION WAVELENGTH; ERBIUM DOPED FIBER AMPLIFIERS; LOW PRESSURE ORGANOMETALLIC VAPOR PHASE EPITAXY; STRAINED QUANTUM WELL LASERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036153046     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6384     Document Type: Article

References (17)