Modifying the electronic properties of GaAs/AlAs superlattices with low-density nitrogen doping

Journal of Applied Physics

Volumn 100, Issue 6, 2006, Pages

  Spasov, S ^a   Allison, G ^a   Patane A ^a   Eaves, L ^a   Hopkinson, M ^b   Airey, R ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; ELECTRONIC PROPERTIES; ELECTRONS; NITROGEN; OPTICAL PROPERTIES; SUPERLATTICES;

ELECTROLUMINESCENCE EMISSION; INTEGRATED INTENSITY; LOW DENSITY NITROGEN DOPING; NITROGEN IMPURITIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33749367364     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2353793     Document Type: Article

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