Growth of bulk Ga(Mn,Si)N single crystals

Journal of Crystal Growth

Volumn 291, Issue 1, 2006, Pages 12-17

  Kamiński, Michał ^a   Szyszko, Tomasz ^a   Podsiadło, Sławomir ^a   Woźniak, Krzysztof ^b   Dobrzycki, Łukasz ^b   Gȩbicki, Wojciech ^a   Gosk, Jacek ^b   Zajac, Marcin ^b   Twardowski, Andrzej ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

Author keywords

A1. Doped single crystals; A2. Single crystal growth; A3. Magnetic properties; A4. Raman spectra

Indexed keywords

AMMONIA; CRYSTAL GROWTH; GALLIUM NITRIDE; MAGNETIC PROPERTIES; MANGANESE; RAMAN SCATTERING; SILICON; X RAY DIFFRACTION ANALYSIS;

GA(MN,SI)N SINGLE CRYSTALS; METALLIC GALLIUM; RAMAN METHODS;

SINGLE CRYSTALS;

EID: 33749349753     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.02.037     Document Type: Article

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