Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT>300GHz

Electronics Letters

Volumn 42, Issue 20, 2006, Pages 1180-1181

  Rieh, J S ^a   Khater, M ^b   Jeseph, A ^c   Freeman, G ^c   Ahlgren, D ^c  

^a Korea University   (South Korea)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC DELAY LINES; ELECTRONICS ENGINEERING; SEMICONDUCTING SILICON COMPOUNDS;

COLLECTOR LATERAL SCALING; KIRK EFFECT; PEAK FT; RC DELAY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33749346420     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20061645     Document Type: Article

References (5)

1. Rieh, J.-S.: et al. ' SiGe HBTs with cut-off frequency of 350GHz ', Tech. Dig. of Int. Electron Devices Meet., 2002, p. 771-774
2. T=350/300GHz and gate delay below 3.3ps ', Tech. Dig. of Int. Electron Devices Meet., 2004, p. 247-250
3. Heinemann, B.: et al. ' A low-parasitic collector construction for high-speed SiGe:C HBTs ', Tech. Dig. of Int. Electron Devices Meet., 2004, p. 251-254
4. Rieh, J.-S.: et al. ' Scaling of SiGe heterojunction bipolar transistors ', Proc. IEEE, 2005, 93, (9), p. 1522-1538 10.1109/JPROC.2005.852228 0018-9219
5. Rieh, J.-S.: et al. ' Reverse active mode current characteristics of SiGe HBTs ', IEEE Trans. Electron Devices, 2005, 52, (6), p. 1219-1222 10.1109/TED.2005.848869 0018-9383