Reverse active mode current characteristics of SiGe HBTs

IEEE Transactions on Electron Devices

Volumn 52, Issue 6, 2005, Pages 1219-1222

  Rieh, Jae Sung ^a   Cai, Jin ^b   Ning, Tak ^b   Stricker, Andreas ^c   Freeman, Greg ^c  

^a Korea University   (South Korea)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

Current; Heterojunction bipolar transistors (HBTs)

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

REVERSE ACTIVE MODE CURRENT CHARACTERISTICS; SILICON GERMANIUM HBTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 21044446403     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.848869     Document Type: Article

References (10)

1. E. F. Crabbé, J. D. Cressler, G. L. Patton, J. M. C. Stork, J. H. Comfort, and J. Y.-C. Sun, "Current gain rolloff in graded-base SiGe heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 14, no. 4, pp. 193-195, Apr. 1993.
2. J. C. J. Paasschens, W. J. Kloosterman, and R. J. Havens, "Modeling two SiGe HBT specific features for circuit simulation," in Proc. Bipolar/ BiCMOS Circuits Technology Meeting, 2001, pp. 38-41.
3. H. C. de Graaff, J. W. Slotboom, and A. Schmitz, "The emitter efficiency of bipolar transistors," Solid State Electron., vol. 20, no. 6, pp. 515-521, 1977.
4. x/Si heterojunction bipolar transistors," in IEDM Tech. Dig., 1989, pp. 639-642.
5. J. J. Ebers and J. L. Moll, "Large-signal behavior of junction transistors," Proc. IRE, vol. 42, pp. 1761-1772, 1954.
6. eff CMOS," in Proc. Bipolar/BiCMOS Circuits Technology Meeting, 1999, pp. 117-120.
7. T in a manufacturable technology," IEEE Electron Device Lett., vol. 23, no. 5, pp. 258-260, May 2002.
8. J.-S. Rieh, B. Jagannathan, H. Chen, K. T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S.-J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. Stein, and S. Subbanna, "SiGe HBTs with cut-off frequency of 350 GHz," in IEDM Tech. Dig., 2002, pp. 771-774.
9. K. Suzuki and N. Nakayama, "Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junciton," IEEE Trans. Electron Devices, vol. 39, no. 3, pp. 623-628, Mar. 1992.
10. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, Cambridge, U.K.: Cambridge Univ. Press, 1998, p. 316.