Influence of Cu content on compound formation near the chip side for the flip-chip Sn-3.0Ag-(0.5 or 1.5)Cu solder bump during aging

Journal of Electronic Materials

Volumn 35, Issue 9, 2006, Pages 1745-1754

  Jang, Guh Yaw ^a   Duh, Jenq Gong ^a   Takahashi, Hideyuki ^b   Lu, Szu Wei ^c   Chen, Jen Chuan ^d  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b JEOL LTD   (Japan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^d ADVANCED SEMICONDUCTOR ENGINEERING INC   (Taiwan)

Author keywords

Flip chip; Interfacial reaction; Sn Ag Cu solder

Indexed keywords

AGING OF MATERIALS; DIFFUSION; FLIP CHIP DEVICES; INTERFACES (MATERIALS); METALLIZING; REACTION KINETICS; THIN FILMS;

BUMP METALLIZATION; INTERFACIAL REACTIONS; PLASTIC SUBSTRATES; SN-AG-CU SOLDERS;

SOLDERED JOINTS;

EID: 33749344956     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0229-3     Document Type: Article

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