Carrier compensation and scattering mechanisms in Si-doped InAs yP 1-y layers grown on InP substrates using intermediate InAs yP 1-y step-graded buffers

Journal of Applied Physics

Volumn 100, Issue 6, 2006, Pages

  Hudait, M K ^a,c   Lin, Y ^a   Sinha, P M ^a,c   Lindemuth, J R ^b   Ringel, S A ^a  

^a The Ohio State University   (United States)

^b Lake Shore Cryotronics Inc   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; ELECTRON CARRIER CONCENTRATION; MOBILITY SPECTRUM ANALYSIS; MOLE FRACTIONS;

CARRIER CONCENTRATION; CARRIER MOBILITY; HALL EFFECT; IONIZATION; MOLECULAR BEAM EPITAXY; SUBSTRATES;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 33749339589     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2349358     Document Type: Article

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