Evaluation of III-V multilayer transport parameters using quantitative mobility spectrum analysis

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 65-69

  Antoszewski, J ^a   Dell, J M ^a   Faraone, L ^a   Tan, L S ^b   Raman, A ^b   Chua, S J ^b   Holmes, D S ^c   Lindemuth, J R ^c   Meyer, J R ^d  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c Lake Shore Cryotronics Inc   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Mobility spectrum; Multi carrier fit; Two dimensional electron gas

Indexed keywords

QUANTITATIVE MOBILITY SPECTRUM ANALYSIS (QMSA);

ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS;

MULTILAYERS;

EID: 0006417317     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01808-9     Document Type: Article

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