Three-dimensional electronic properties of multiple vertically stacked InAs/GaAs self-assembled quantum dots

Journal of Applied Physics

Volumn 100, Issue 6, 2006, Pages

  Kim, J H ^a   Woo, J T ^a   Kim, T W ^a   Yoo, K H ^b   Lee, Y T ^c  

^a Hanyang University   (South Korea)

^b Kyung Hee University   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; FINITE DIFFERENCE METHOD; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NUMERICAL METHODS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRONIC SUBBAND ENERGIES; MICROSTRUCTURAL PROPERTIES; STRAIN EFFECTS; TEMPERATURE DEPENDENT PHOTOLUMINESCENCE;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33749316965     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2353783     Document Type: Article

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