Thermal conductivity of interconnected silicon nanoparticles: Application to porous silicon nanostructures

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 3, 2005, Pages

  Chantrenne, P ^a   Lysenko, V ^b  

^a UNIVERSITÉ DE LYON   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749159051     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.035318     Document Type: Article

References (25)

1. A. Khitun, A. Balandin, and K. L. Wang, Superlattices Microstruct. SUMIEK 0749-6036 10.1006/spmi.1999.0772 26, 181 (1999).
2. S. G. Volz and G. Chen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.124914 75, 2056 (1999).
3. J. Zou and A. Balandin, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1345515 89, 2932 (2001).
4. X. Lü and J. H. Chu, Eur. Phys. J. B EPJBFY 1434-6028 26, 375 (2002).
5. N. Mingo, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.113308 68, 113308 (2003).
6. D. Li, Y. Wu, P. Kim, L. Shi, P. Yang, and A. Majumdar, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1616981 83, 2934 (2003).
7. V. Lehmann, R. Stengl, and A. Luigart, Mater. Sci. Eng., B MSBTEK 0921-5107 69-70, 11 (2000).
8. V. Lysenko, S. Perichon, B. Remaki, and D. Barbier, Sens. Actuators, A SAAPEB 0924-4247 99, 13 (2002).
9. V. Lysenko, L. Boarino, M. Bertola, B. Remaki, A. Dittmar, G. Amato, and D. Barbier, Microelectron. J. MICEB9 0026-2692 10.1016/S0026-2692(99)00077-4 30, 1141 (1999).
10. G. Cantele, D. Ninno, and G. Iadonisi, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.61.13730 61, 13730 (2000).
11. V. Lehmann, F. Hofmann, F. Möller, and U. Grüning, Thin Solid Films THSFAP 0040-6090 10.1016/0040-6090(94)05624-M 255, 20 (1995).
12. P. Chantrenne and J. L. Barrat, J. Heat Transfer JHTRAO 0022-1481 10.1115/1.1777582 126, 577 (2004).
13. B. N. Brockhouse, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett. 2.256 2, 256 (1959).
14. P. Chantrenne, J. L. Barrat, X. Blase, and J. D. Gale, J. Appl. Phys. JAPIAU 0021-8979 97, 104318 (2005).
15. M. G. Holland, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.132.2461 132, 2461 (1963).
16. P. G. Klemens, Proc. Phys. Soc., London, Sect. A PPSAAM 0370-1298 48, 1113 (1955).
17. M. Asheghi, M. N. Toulzelbaev, K. Goodson, Y. K. Leung, and S. S. Wong, ASME J. Heat Transfer JHTRAO 0022-1481 120, 30 (1998).
18. H. B. G. Casimir, Physica (Amsterdam) PHYSAG 0031-8914 10.1016/S0031-8914(38)80162-2 5, 495 (1938).
19. M. Asheghi, K. Kurabayashi, R. Kasnavi, and K. E. Goodson, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1458057 91, 5079 (2002).
20. A. Halimaoui, in Properties of porous silicon, edited by, L. T. Canham, (INSPEC, The IEE, London, United Kingdom, 1997), p. 12.
21. A. Feyh, F. Laermer, and W. Mokwa, in Abstract Book of the 4-th International Conference "Porous Semiconductors - Science and Technology," edited by, L. T. Canham,,, A. Nassiopoulou,,, V. Parkhutik,, and, E. Matveeva, (Teobaldo Jorda y Cia, Valencia, Spain, 2004), p. 294.
22. see, for example: Md. N. Islam and S. Kumar, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1343494 78, 715 (2001).
23. V. Lysenko, S. Perichon, B. Remaki, D. Barbier, and B. Champagnon, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.371760 86, 6841 (1999).
24. L. Smith and S. D. Collins, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.350839 71, R1 (1992).
25. V. Yu. Timoshenko, Th. Dittrich, V. Lysenko, M. G. Lisachenko, and F. Koch, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.64.085314 64, 085314 (2001).