Effect of be doping on the properties of GaMnAs ferromagnetic semiconductors

Journal of Applied Physics

Volumn 93, Issue 10 3, 2003, Pages 8307-8309

  Lee, S ^a   Chung, S J ^a   Choi, I S ^a   Yuldeshev, Sh U ^b   Im, Hyunsik ^b   Kang, T W ^b   Lim, W L ^c   Sasaki, Y ^c   Liu, X ^c   Wojtowicz, T ^d   Furdyna, J K ^c  

^a Korea University   (South Korea)

^b Dongguk University   (South Korea)

^c UNIVERSITY OF NOTRE DAME   (United States)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; CARRIER CONCENTRATION; MAGNETIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SQUIDS; THERMODYNAMICS;

CURIE TEMPERATURE;

FERROMAGNETIC MATERIALS;

EID: 0038655514     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1556272     Document Type: Conference Paper

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