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Volumn 242, Issue 1-2, 2005, Pages 134-139

Magnetotransport properties and the annealing effect of (Ga,Mn)As/Si heterostructures and substrate-free (Ga,Mn)As films

(4) Sato, S a Osman, M A a Jinbo, Y a Uchitomi, N a

a NAGAOKA UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

Diluted magnetic semiconductor; GaAs Si heterostructures; GaMnAs; Low temperature MBE

Indexed keywords

ANNEALING; COMPRESSIVE STRESS; DIFFUSION; ETCHING; FERROMAGNETISM; FILM GROWTH; HALL EFFECT; HETEROJUNCTIONS; LATTICE CONSTANTS; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSPORT PROPERTIES; X RAY DIFFRACTION ANALYSIS;

DILUTED MAGNETIC SEMICONDUCTOR; GAAS/SI HETEROSTRUCTURES; GAMNAS; LOW TEMPERATURE MBE; MAGNETOTRANSORT PROPERTIES;

SEMICONDUCTING FILMS;

EID: 12144268410 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2004.08.007 Document Type: Article

Times cited : (11)

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