Effect of body contacts on high-speed circuits in 90 nm CMOS SOI technology

ISSCS 2005: International Symposium on Signals, Circuits and Systems - Proceedings

Volumn 2, Issue , 2005, Pages 537-540

  Weiss, Jonas R M ^a   Menolfi, Christian ^a   Morf, Thomas ^a   Schmatz, Martin L ^a   Jaeckel, Heinz ^b  

^a IBM RESEARCH ZURICH   (Switzerland)

^b ETH ZURICH   (Switzerland)

Author keywords

CMOS analog integrated circuits; Integrated circuit design; SOI technology

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; NETWORK PROTOCOLS; VLSI CIRCUITS;

BODY CONTACTS; CMOS ANALOG INTEGRATED CIRCUITS; HIGH-SPEED CIRCUITS; SOI TECHNOLOGY;

CMOS INTEGRATED CIRCUITS;

EID: 33749048033     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCS.2005.1511296     Document Type: Conference Paper

References (6)

1. G.G. Shahidi. "SOI Technology for the GHz Era," Proc. 2001 International Symposium on VLSI Technology, pp. 121-131.
2. S.K.H. Fung et al., "Controlling Floating-Body Effects for 0.13 μm and 0.10 μm SOI CMOS," International Electron Device Meeting, IDEM Technical Digest. 2000, pp. 231-234.
3. Frank Ellinger, "SOI CMOS Traveling Wave Amplifier with NF below 3. 8 dB from 0.1-40 GHz," IEEE J. Solid State Circuits, vol. 40, no. 2, pp. 553-558. (Feb. 2005)
4. S.K.H. Fung et al., "Impact of the Gate-to-Body Tunneling Current on SOI History Effect," 2000 IEEE International SOI Conference, Oct. 2000, pp. 122-123.
5. Thomas T.Y. Wong, "Fundamentals of Distributed Amplification" Artech House, Inc., Boston, London, 1993
6. Christopher F. Edwards et al., "The Effect of Body Contact Series Resistance on SOI CMOS Amplifier Stages," IEEE Trans. Electron Dev., vol. 44, no. 12, pp. 2290-2294. (Dec. 1997).