Impact of the gate-to-body tunneling current on SOI history effect

IEEE International SOI Conference

Volumn , Issue , 2000, Pages 122-123

  Fung, Samuel K H ^a   Zamdmer, Noah ^a   Yang, Isabel ^a   Sherony, Melanie ^a   Lo, Shih Hsieh ^a   Wagner, Lawrence ^a   Chen, T C ^a   Shahidi, Ghavam ^a   Assaderaghi, Fari ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIELECTRIC MATERIALS; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES;

TUNNELING CURRENTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034471317     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)