Determination of interface state distribution in polysilicon thin film transistors from low-frequency noise measurements: Application to analysis of electrical properties

Journal of Applied Physics

Volumn 100, Issue 5, 2006, Pages

  Pichon, L ^a,b   Boukhenoufa C, A ^a   Cordier, ^a   Cretu, B ^a  

^a Centre National de la Recherche Scientifique   (France)

^b IETR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLIZATION; ELECTRON TUNNELING; INTERFACES (MATERIALS); LASER APPLICATIONS; POLYSILICON;

FREE CARRIER NUMBERS; INVERSION REGION; LASER ANNEALING; TUNNELING THEORY;

THIN FILM TRANSISTORS;

EID: 33748895549     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335395     Document Type: Article

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