Density of states in the channel material of low temperature polycrystalline silicon thin film transistors

Journal of Non-Crystalline Solids

Volumn 266-269 B, Issue , 2000, Pages 1279-1283

  Mourgues, K ^a   Rahal, A ^a,b   Mohammed Brahim, T ^a   Sarret, M ^a   Kleider, J P ^c   Longeaud, C ^c   Bachrouri, A ^d   Romano Rodriguez, A ^d  

^a Grp Microlectron et Visualisation   (France)

^b UNIVERSITY OF SCIENCES AND TECHNOLOGY HOUARI BOUMEDIENE   (Algeria)

^c UNIV PARIS SUD   (France)

^d UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012796065     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0022-3093(99)00937-0     Document Type: Article

References (9)

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3. Y. Helen, K. Mourgues, F. Raoult, T. Mohammed-Brahim, O. Bonnaud, P. Boher, D. Zahorski, Thin Solid Films 337 (1999) 133.
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7. J.P. Kleider, C. Longeaud, Solid State Phenomena, 44-46, 1995, Scitec, p. 597.
8. T. Mohammed-Brahim, K. Kis-Sion, D. Briand, M. Sarret, O. Bonnaud, J.P. Kleider, C. Longeaud, B. Lambert, J. Non-Cryst. Solids 227-230 (1998) 962.
9. G. Fortunato, P. Migliorato, Appl. Phys. Lett. 49 (1986) 1025.