Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise

Thin Solid Films

Volumn 383, Issue 1-2, 2001, Pages 303-306

  Mercha, A ^a   Pichon, L ^a   Carin, R ^a   Mourgues, K ^b   Bonnaud, O ^b  

^a Centre National de la Recherche Scientifique   (France)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; GRAIN BOUNDARIES; HOLE TRAPS; HYDROGENATION; PASSIVATION; POLYSILICON; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

LOW FREQUENCY NOISE; POLYSILICON THIN FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 0035246799     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01795-8     Document Type: Article

References (4)

1. Mourgues K., Raoult F., Pichon L., Mohammed-Brahim T., Briand D., Bonnaud O. Mat. Res. Soc. Symp. Proc. 141:1997;155-160.
2. Brotherton S.D., Ayres J.R., Trainor M.J. J. Appl. Phys. 79:1996;895-904.
3. Vandamme L.K.J., Li X., Rigaud D. IEEE Trans. Electron. Dev. 41:1994;1936-1944.
4. A. Mercha, J. Rhayem, L. Pichon, M. Valenza, J. M. Routoure, R. Carin, O. Bonnaud, D. Rigaud, in 15th ICNF Hong Kong (1999) 62-66.