Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions

Solid-State Electronics

Volumn 49, Issue 8, 2005, Pages 1376-1380

  Cordier, C ^a   Boukhenoufa, A ^a   Pichon, L ^a   Michaud, J F ^b  

^a UNIVERSITÉ DE CAEN   (France)

^b IETR   (France)

Author keywords

Low frequency noise; MOSFETs; Noise model; Oxide traps; Poly Si; Thin film transistors

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRIC POTENTIAL; INTERFACES (MATERIALS); MATHEMATICAL MODELS; POLYSILICON; SPURIOUS SIGNAL NOISE; THIN FILM TRANSISTORS;

GATE VOLTAGE; LOW FREQUENCY NOISE; NOISE MODELS; OXIDE TRAPS;

MOSFET DEVICES;

EID: 24144500787     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.06.012     Document Type: Article

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