Low-temperature-processed polycrystalline silicon thin-film transistors with stable solid-state continuous-wave laser crystallization

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 33-36, 2006, Pages

  Fan, Ching Lin ^a   Yang, Tsung Hsien ^a   Lin, Cheng I ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Continuous wave laser crystallization; Optimized laser parameters; Scan speed stability; Solid state laser; Thin film transistors

Indexed keywords

CONTINUOUS WAVE LASERS; CRYSTALLIZATION; OPTIMIZATION; POLYCRYSTALLINE MATERIALS; SILICON; SOLID STATE DEVICES;

CONTINUOUS-WAVE LASER CRYSTALLIZATION; OPTIMIZED LASER PARAMETERS; SCAN SPEED STABILITY;

THIN FILM TRANSISTORS;

EID: 33748865052     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L973     Document Type: Article

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