A new approach for form polycrystalline silicon by excimer laser irradiation with a wide range of energies

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 A, 1999, Pages 6624-6628

  Hara, Akito ^a   Kitahara, Kuninori ^a,b   Nakajima, Kazuo ^a,c   Okabe, Masahiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b SHIMANE UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Crystal growth; Excimer laser; Grain; Grain boundary; Poly Si; Polycrystalline silicon; Si; Silicon; TFT; Thin film transistor

Indexed keywords

CARRIER MOBILITY; CRYSTAL GROWTH; CRYSTALLIZATION; DEPOSITION; EXCIMER LASERS; FILM PREPARATION; HEATING; IRRADIATION; LASER APPLICATIONS; MELTING; POLYCRYSTALLINE MATERIALS; THIN FILM TRANSISTORS;

LASER ENERGIES; LASER IRRADIATION; POLYCRYSTALLINE SILICON; SILICON FILM;

AMORPHOUS SILICON;

EID: 0033326176     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.6624     Document Type: Article

References (5)

1. Y. Morimoto, Y. Jinno, K. Hirai, H. Ogata, T. Yamada and K. Yoneda: J. Electrochem. Soc. 144 (1997) 2495.
2. Y. Aya, T. Nouda, Y. Nakahara, H. Abe and H. Hamada: Dig. Tech. Pap. 1997 Int. Workshop on Active-Matrix Liquid Crystal Display (Tokyo, 1997) p. 167.
3. A. Hara, K. Kitahara, K. Nakajima and M. Okabe: Dig. Tech. Pap. 1998 Int. Workshop on Active-Matrix Liquid Crystal Displays (Tokyo, 1998) p. 157.
4. R. C. Cammarata, C. V. Thompson, C. Hayzelden and K. N. Tu: J. Mater. Res. 5 (1990) 2133.
5. C. Hayzelden and J. L. Batstone: J. Appl. Phys. 73 (1993) 8279.