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Computational Materials Science

Volumn 33, Issue 1-3, 2005, Pages 125-131

Half-metallic Mn-doped Si(x)Ge(1 - X) alloys: A first principles study

(5) Peressi, M a,b Debernardi, A a,b,d Picozzi, S c Antoniella, F c Continenza, A c

a DEMOCRITOS NATIONAL SIMULATION CENTER (Italy)

b UNIVERSITY OF TRIESTE (Italy)

c UNIVERSITY OF L'AQUILA (Italy)

d LABORATORIO MDM (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIFERROMAGNETISM; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; FERROMAGNETIC MATERIALS; IMPURITIES; LINEARIZATION; MANGANESE; SOLUBILITY; THIN FILMS; VECTORS;

DENSITY FUNCTIONAL THEORY (DFT); HETEROEPITAXIAL THIN FILMS; SPINTRONICS; STRAIN EFFECTS;

SILICON ALLOYS;

EID: 14644401819 PISSN: 09270256 EISSN: None Source Type: Journal
DOI: 10.1016/j.commatsci.2004.12.029 Document Type: Conference Paper

Times cited : (9)

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