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Volumn 21, Issue 10, 2006, Pages 1387-1392

A comparative study of BSF layers for GaAs-based single-junction or multijunction concentrator solar cells

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; MIRRORS; PROBLEM SOLVING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; ZINC;

EID: 33748852281     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/10/003     Document Type: Article
Times cited : (43)

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  • 8
    • 0024663391 scopus 로고
    • Projections of GaAs solar-cell performance limits based on two-dimensional numerical simulation
    • DeMoulin P D and Lundstrom M S 1989 Projections of GaAs solar-cell performance limits based on two-dimensional numerical simulation IEEE Trans. Electron Devices 36 897-905
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.5 , pp. 897-905
    • Demoulin, P.D.1    Lundstrom, M.S.2
  • 14
    • 0035254052 scopus 로고    scopus 로고
    • 0.5P/GaAs/Ge dual- and triple-junction solar cells: Steps to next-generation PV cells
    • 0.5P/GaAs/Ge dual- and triple-junction solar cells: steps to next-generation PV cells Solar Energy Mater. Solar Cells 66 453-66
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  • 15
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    • Multi-junction solar cells and novel structures for solar cell applications
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    • Yamaguchi, M.1
  • 16
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    • Moll Amy Jo 1994 Carbon doping of III-V semiconductors PhD Dissertation Lawrence Berkley Laboratory, University of California
    • (1994) PhD Dissertation
    • Amy Jo, M.1
  • 17
    • 0028761921 scopus 로고
    • Carbon doping in metalorganic vapour phase epitaxy
    • Kuech T F and Redwing J M 1994 Carbon doping in metalorganic vapour phase epitaxy J. Cryst. Growth 145 382-9
    • (1994) J. Cryst. Growth , vol.145 , Issue.1-4 , pp. 382-389
    • Kuech, T.F.1    Redwing, J.M.2
  • 25
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    • Interface properties of isotype GaAs/InGaP/GaAs heterojunctions frown by MOVPE on GaAs
    • Krispin P, Asghar M, Knauer A and Kostial H 2000 Interface properties of isotype GaAs/InGaP/GaAs heterojunctions frown by MOVPE on GaAs J. Cryst. Growth 220 220-5
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.