Interface properties of isotype GaAs/(In,Ga)P/GaAs heterojunctions grown by metalorganic-vapour-phase epitaxy on GaAs

Journal of Crystal Growth

Volumn 220, Issue 3, 2000, Pages 220-225

  Krispin, P ^a   Asghar, M ^a   Knauer, A ^b   Kostial, H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; HOLE TRAPS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; POISSON DISTRIBUTION; SEMICONDUCTING GALLIUM ARSENIDE;

DEEP LEVEL TRANSIENT FOURIER SPECTROSCOPY; HETEROINTERFACES;

SEMICONDUCTING FILMS;

EID: 0034501436     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00830-7     Document Type: Article

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