Rigorous carrier dynamic model of electroluminescent metal-oxide- semiconductor silicon tunneling diodes

Journal of Applied Physics

Volumn 100, Issue 5, 2006, Pages

  Liang, Eih Zhe ^a   Su, Ting Wei ^a   Lin, Ching Fuh ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Graduate Institute of Electronics Engineering   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK-TRAP DENSITY; CARRIER DYNAMICS; ELECTROLUMINESCENT METAL-OXIDE-SEMICONDUCTOR SILICON TUNNELING DIODES; MAXWELL-BOLTZMANN APPROXIMATION;

APPROXIMATION THEORY; CURRENT DENSITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; ELECTRON TUNNELING; MOS DEVICES; SEMICONDUCTING SILICON;

SEMICONDUCTOR DIODES;

EID: 33748848669     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345048     Document Type: Article

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