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Volumn 90, Issue 2, 2001, Pages 789-793

Model for band-edge electroluminescence from metal-oxide-semiconductor silicon tunneling diodes

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0035878711     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1381000     Document Type: Article
Times cited : (20)

References (19)
  • 8
  • 12
    • 0012917842 scopus 로고
    • edited by A. F. Gibson Heywood, London
    • T. P. McLean, in Progress in Semiconductor, edited by A. F. Gibson (Heywood, London, 1960), Vol. 5.
    • (1960) Progress in Semiconductor , vol.5
    • McLean, T.P.1
  • 13
    • 0003957801 scopus 로고
    • edited by R. K. Willardson and A. C. Beer Academic, New York
    • H. Barry Bebb and E. W. Williams, in Semiconductor and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1972), Vol. 8.
    • (1972) Semiconductor and Semimetals , vol.8
    • Barry Bebb, H.1    Williams, E.W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.