Photoconduction in tunnel-coupled Ge/Si quantum dot arrays

Journal of Experimental and Theoretical Physics

Volumn 103, Issue 2, 2006, Pages 269-277

  Stepina, N P ^a,b   Yakimov, A I ^a   Nenashev, A V ^a   Dvurechenskii A V ^a   Sobolev, N A ^b   Leitao, J P ^b   Kirienko, V V ^a   Nikiforov, A I ^a   Koptev, E S ^a   Pereira, L ^b   Carmo, M C ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; CARRIER CONCENTRATION; GERMANIUM; LIGHTING; PHOTOCONDUCTIVITY; REACTION KINETICS; RELAXATION PROCESSES; SILICON;

PC KINETICS; PERSISTENT PHOTOCONDUCTION (PPC); QD FILLING; QUANTUM DOT (QD) ARRAY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748781241     PISSN: 10637761     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063776106080103     Document Type: Article

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