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Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 470, Issue 1-2, 2001, Pages 283-289

Microscopic parameters of heterostructures containing nanoclusters and thin layers of Ge in Si matrix

(6) Erenburg, S B a Bausk, N V a Stepina, N P b Nikiforov, A I b Nenashev, A V b Mazalov, L N a

a NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY (Russian Federation)

b INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

Ge films; Local structure; Quantum dots; XAFS

Indexed keywords

CRYSTAL IMPURITIES; GERMANIUM; GRAIN BOUNDARIES; LATTICE CONSTANTS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES; THIN FILMS;

NANOCLUSTERS;

HETEROJUNCTIONS;

EID: 0035450681 PISSN: 01689002 EISSN: None Source Type: Journal
DOI: 10.1016/S0168-9002(01)01080-4 Document Type: Article

Times cited : (9)

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