The influence of the preliminary ion implantation in the znse on the properties of the ZnO-ZnSe structures, obtained by the radical beam gettering epitaxy method

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 388, Issue 3, 1997, Pages 431-433

  Georgobiani, A N ^a   Kotljarevsky, M B ^b   Aminov, U A ^a   Kidalov, V V ^c   Rogozin, I V ^c  

^a LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^b Azov Regional Management Institute   (Ukraine)

^c BERDYANSK STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; CRYSTALS; INTERFACES (MATERIALS); ION IMPLANTATION; IONS; PHOTOLUMINESCENCE; RADIATION EFFECTS; STRUCTURE (COMPOSITION); ZINC; ZINC OXIDE;

ATOMIC OXYGEN; RADICAL BEAM GETTERING EPITAXY; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031117144     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)01247-8     Document Type: Article

References (5)

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2. T.V. Butkhuzi, A.V. Bureev, A.N. Georgobiani, N.P. Kekelidze and T.G. Khulordava, J. Cryst. Growth 117 (1992) 366.
3. V.N. Mikhalenko, M.B. Kotljarevsky, A.N. Georgobiani and V.A. Sokolov, Sov. Zh. Fiz. Khim. 2 (1980) 345.
4. R. Boyn, Phys. Stat. Sol (b) 148 (1988) 11.
5. N. Abolhassani and F. Bryant, J. Phys. C: Sol. State Phys. 20 (1987) 207.