Formation of microcrystalline silicon and SiNx films by electron-beam-induced-chemical vapor deposition at ultra low temperature

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 61-64

  Sato, Tetsuya ^a   Mitsui, Minoru ^a   Yamanaka, Junji ^a   Nakagawa, Kiyokazu ^a   Aoki, Yutaka ^b   Sato, Shouji ^b   Miyata, Chiharu ^b  

^a UNIVERSITY OF YAMANASHI   (Japan)

^b Miyatsu Co Ltd   (Japan)

Author keywords

Electron beam; Low temperature; Microcrystalline silicon; Silicon nitride; Tunneling

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON BEAMS; ELECTRON TUNNELING; HYDROGENATION; LOW TEMPERATURE EFFECTS; PHOTOCONDUCTIVITY; SILICON NITRIDE;

ELECTRON BEAM INDUCED CHEMICAL VAPOR DEPOSITION; HYDROGENATED AMORPHOUS; MICROCRYSTALLINE SILICON;

THIN FILMS;

EID: 33748655227     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.333     Document Type: Article

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